JPH0143298B2 - - Google Patents
Info
- Publication number
- JPH0143298B2 JPH0143298B2 JP58149745A JP14974583A JPH0143298B2 JP H0143298 B2 JPH0143298 B2 JP H0143298B2 JP 58149745 A JP58149745 A JP 58149745A JP 14974583 A JP14974583 A JP 14974583A JP H0143298 B2 JPH0143298 B2 JP H0143298B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- dqn
- exposed
- pyrene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 claims description 12
- 229920003986 novolac Polymers 0.000 claims description 11
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 53
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000004090 dissolution Methods 0.000 description 9
- 238000011161 development Methods 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- KBSPJIWZDWBDGM-UHFFFAOYSA-N 1-Methylpyrene Chemical compound C1=C2C(C)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 KBSPJIWZDWBDGM-UHFFFAOYSA-N 0.000 description 3
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000013074 reference sample Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 230000015843 photosynthesis, light reaction Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- RVUFIAZZLHJNJS-UHFFFAOYSA-N 5-[4-benzoyl-3-(6-diazonio-5-oxidonaphthalen-1-yl)sulfonyloxyphenoxy]sulfonyl-2-diazonionaphthalen-1-olate Chemical compound C1=CC=C2C([O-])=C([N+]#N)C=CC2=C1S(=O)(=O)OC(C=C1OS(=O)(=O)C=2C3=CC=C(C([O-])=C3C=CC=2)[N+]#N)=CC=C1C(=O)C1=CC=CC=C1 RVUFIAZZLHJNJS-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XXTZHYXQVWRADW-UHFFFAOYSA-N diazomethanone Chemical compound [N]N=C=O XXTZHYXQVWRADW-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 150000005691 triesters Chemical class 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/454,766 US4464458A (en) | 1982-12-30 | 1982-12-30 | Process for forming resist masks utilizing O-quinone diazide and pyrene |
| US454766 | 1982-12-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59124134A JPS59124134A (ja) | 1984-07-18 |
| JPH0143298B2 true JPH0143298B2 (en]) | 1989-09-20 |
Family
ID=23805998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58149745A Granted JPS59124134A (ja) | 1982-12-30 | 1983-08-18 | レジスト・マスクの形成方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4464458A (en]) |
| EP (1) | EP0113033A3 (en]) |
| JP (1) | JPS59124134A (en]) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4578344A (en) * | 1984-12-20 | 1986-03-25 | General Electric Company | Photolithographic method using a two-layer photoresist and photobleachable film |
| US4571374A (en) * | 1984-12-27 | 1986-02-18 | Minnesota Mining And Manufacturing Company | Multilayer dry-film positive-acting laminable photoresist with two photoresist layers wherein one layer includes thermal adhesive |
| US4672021A (en) * | 1985-06-03 | 1987-06-09 | Fairmount Chemical Company | Contrast enhancement layer composition with naphthoquinone diazide, indicator dye and polymeric binder |
| US4863827A (en) * | 1986-10-20 | 1989-09-05 | American Hoechst Corporation | Postive working multi-level photoresist |
| US5290656A (en) * | 1988-05-07 | 1994-03-01 | Sumitomo Chemical Company, Limited | Resist composition, novel phenol compound and quinone diazide sulfonic acid ester of novel phenol compound |
| JP2661671B2 (ja) * | 1989-03-20 | 1997-10-08 | 株式会社日立製作所 | パタン形成材料とそれを用いたパタン形成方法 |
| JP2720224B2 (ja) * | 1990-06-15 | 1998-03-04 | 富士写真フイルム株式会社 | 感光性平版印刷版 |
| US6187515B1 (en) * | 1998-05-07 | 2001-02-13 | Trw Inc. | Optical integrated circuit microbench system |
| US6322953B1 (en) * | 1999-03-29 | 2001-11-27 | Winbond Electronics Corporation | Method for obtaining uniform photoresist coatings |
| GB201517273D0 (en) * | 2015-09-30 | 2015-11-11 | Univ Manchester | Resist composition |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2937085A (en) * | 1954-01-11 | 1960-05-17 | Ditto Inc | Composite photosensitive plate, and method of making printing plate therefrom |
| BE563723A (en]) * | 1957-01-04 | |||
| US3317320A (en) * | 1964-01-02 | 1967-05-02 | Bendix Corp | Duo resist process |
| US3380825A (en) * | 1964-11-27 | 1968-04-30 | Du Pont | Process for producing images |
| US3486900A (en) * | 1965-06-02 | 1969-12-30 | Keuffel & Esser Co | Diazotype material |
| US3482977A (en) * | 1966-02-11 | 1969-12-09 | Sylvania Electric Prod | Method of forming adherent masks on oxide coated semiconductor bodies |
| US3518084A (en) * | 1967-01-09 | 1970-06-30 | Ibm | Method for etching an opening in an insulating layer without forming pinholes therein |
| US3634082A (en) * | 1967-07-07 | 1972-01-11 | Shipley Co | Light-sensitive naphthoquinone diazide composition containing a polyvinyl ether |
| US3567453A (en) * | 1967-12-26 | 1971-03-02 | Eastman Kodak Co | Light sensitive compositions for photoresists and lithography |
| US3549368A (en) * | 1968-07-02 | 1970-12-22 | Ibm | Process for improving photoresist adhesion |
| US3591378A (en) * | 1968-07-31 | 1971-07-06 | Eastman Kodak Co | Process for making positive-working relief plate |
| US3716390A (en) * | 1970-05-27 | 1973-02-13 | Bell Telephone Labor Inc | Photoresist method and products produced thereby |
| US3827908A (en) * | 1972-12-11 | 1974-08-06 | Ibm | Method for improving photoresist adherence |
| US4036644A (en) * | 1973-03-16 | 1977-07-19 | International Business Machines Corporation | Photoresist process and photosensitive O-quinone diazide article with aliphatic carboxylic acid as adhesion promotor |
| US3873313A (en) * | 1973-05-21 | 1975-03-25 | Ibm | Process for forming a resist mask |
| US3982943A (en) * | 1974-03-05 | 1976-09-28 | Ibm Corporation | Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask |
| US3955981A (en) * | 1975-01-06 | 1976-05-11 | Zenith Radio Corporation | Method of forming electron-transmissive apertures in a color selection mask by photoetching with two resist layers |
| US4009033A (en) * | 1975-09-22 | 1977-02-22 | International Business Machines Corporation | High speed positive photoresist composition |
| US4088490A (en) * | 1976-06-14 | 1978-05-09 | International Business Machines Corporation | Single level masking process with two positive photoresist layers |
| GB1604652A (en) * | 1977-04-12 | 1981-12-16 | Vickers Ltd | Radiation sensitive materials |
| GB1578259A (en) * | 1977-05-11 | 1980-11-05 | Philips Electronic Associated | Methods of manufacturing solid-state devices apparatus for use therein and devices manufactured thereby |
| US4212935A (en) * | 1978-02-24 | 1980-07-15 | International Business Machines Corporation | Method of modifying the development profile of photoresists |
| US4237216A (en) * | 1978-12-08 | 1980-12-02 | International Business Machines Corporation | Photosensitive patternable coating composition containing novolak type materials |
| US4352870A (en) * | 1979-11-27 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | High resolution two-layer resists |
-
1982
- 1982-12-30 US US06/454,766 patent/US4464458A/en not_active Expired - Lifetime
-
1983
- 1983-08-18 JP JP58149745A patent/JPS59124134A/ja active Granted
- 1983-11-24 EP EP83111764A patent/EP0113033A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59124134A (ja) | 1984-07-18 |
| EP0113033A2 (en) | 1984-07-11 |
| US4464458A (en) | 1984-08-07 |
| EP0113033A3 (en) | 1987-03-25 |
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